UGC NET Electronic Science Practice Questions - UGC NET Electronic Science (Paper 2) Exam

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Under thermal equilibrium, the product of electron and hole concentrations in a semiconductor is equal to the square of its intrinsic carrier concentration (ni^2). If a silicon sample at 300 K has an intrinsic carrier concentration of 1.5 x 10^10 cm^-3 and is doped with donor atoms to a concentration of 1 x 10^16 cm^-3, what is the hole concentration in the sample?

2.25 x 10^4 cm^-3 1.5 x 10^4 cm^-3 2.25 x 10^6 cm^-3 1.5 x 10^6 cm^-3

Correct Answer:

2.25 x 10^4 cm^-3

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