BEL Probationary Engineer Practice Questions - Bharat Electronics Limited Probationary Engineer (E-II Grade) Examination Exam

In a forward-biased silicon PN junction diode, the dominant current mechanism is:

Minority-carrier injection across the depletion region Thermionic emission in vacuum Tunneling through the oxide layer Photoelectric emission at the cathode

Correct Answer:

Minority-carrier injection across the depletion region

Access more questions from this quiz

Continue to BEL Probationary Engineer Practice Questions - Bharat Electronics Limited Probationary Engineer (E-II Grade) Examination Exam for more practice questions and the full quiz experience.

Access More Questions