UGC NET Electronic Science Practice Questions - UGC NET Electronic Science (Paper 2) Exam

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A High Electron Mobility Transistor (HEMT) utilizes a heterojunction to achieve high switching speeds. Which phenomenon is primarily responsible for the extremely high mobility in a HEMT?

Formation of a Two-Dimensional Electron Gas (2DEG) at the undoped heterointerface Doping of the channel with heavy donor concentrations Reduced effective mass due to high temperatures Direct bandgap transition in silicon substrate

Correct Answer:

Formation of a Two-Dimensional Electron Gas (2DEG) at the undoped heterointerface

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